2 225,00 124 390,00  ex. VAT

Mono- or multilayer Graphene deposited on Silicon Carbide by Si sublimation technique.

Clear selection
  • Growth Method: Si sublimation in AIXTRON’s AIX G5 WW reactor or AIXTRON’s VP508 reactor
  • Alternative growth method on request: sublimation
  • Electron mobility at 300K: up to 3000 cm2/Vs for N type and up to 6500 cm2/Vs for P type
  • Sheet carrier concentration at 300K: 5E11 – 1,5E13 cm-2 for N type and 1-1,5 E13 cm-2 for P type
  • Optional H2 intercalation changes type of conductivity from N to P by bounding to the topmost Si atoms of the SiC substrate (read more about effects in the article “Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC”)
  • Number of layers: 1-2 for non-intercalated and 1-3 for hydrogen intercalated samples
  • Standard quality check: Raman spectroscopy – single point
  • Optional measurements: please check “Research Services”


Standard substrates:

  • SiC polytype: 4H-SiC(0001) or 6H-SiC(0001), other available on request
  • Side used: Si-face or C-face
  • Standard sample sizes: 10mm x 10mm, 15mm x 15mm, Ø3”, Ø 4”, Ø6”
Substrate crystal polytype

SiC-4H ( 0001 ), SiC 6H ( 0001 )

Substrate conductivity

Conductive, Semi-insulating


10 mm x 10 mm, 15 mm x 15 mm, Ø3, Ø4, Ø6

1. GO – graphene oxide

2. RGO – reduced graphene oxide

3. PET, PMMA – poly(ethylene terephthalate, poly(methyl methacrylate)

4. SiC – silicon carbide

5. GaN – gallium nitride

6. CVD – Chemical Vapor Deposition

7. SEM – Scanning Electron Microscopy

8. AFM – Atomic Force Microscopy

9. Raman – Raman Spectroscopy

10. TEM – Transmission Electron Microscopy
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